Invention Grant
- Patent Title: Fabrication method of semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US13473817Application Date: 2012-05-17
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Publication No.: US08741786B2Publication Date: 2014-06-03
- Inventor: Koji Akiyama , Hirokazu Higashijima , Yoshitsugu Tanaka , Yasushi Akasaka , Koji Yamashita
- Applicant: Koji Akiyama , Hirokazu Higashijima , Yoshitsugu Tanaka , Yasushi Akasaka , Koji Yamashita
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2011-120851 20110530
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
A disclosed fabrication method of a semiconductor device includes steps of depositing a dielectric film on a semiconductor substrate; thermally treating the dielectric film; and irradiating an ionized gas cluster onto the thermally treated dielectric film.
Public/Granted literature
- US20120309207A1 FABRICATION METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2012-12-06
Information query
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