Invention Grant
US08741787B2 Increased density of low-K dielectric materials in semiconductor devices by applying a UV treatment
有权
通过施加UV处理来增加半导体器件中的低K电介质材料的密度
- Patent Title: Increased density of low-K dielectric materials in semiconductor devices by applying a UV treatment
- Patent Title (中): 通过施加UV处理来增加半导体器件中的低K电介质材料的密度
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Application No.: US12842548Application Date: 2010-07-23
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Publication No.: US08741787B2Publication Date: 2014-06-03
- Inventor: Ulrich Mayer , Hartmut Ruelke , Christof Streck
- Applicant: Ulrich Mayer , Hartmut Ruelke , Christof Streck
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Priority: DE102009035417 20090731
- Main IPC: H01L21/768
- IPC: H01L21/768
Abstract:
A silicon-based low-k dielectric material is formed on the basis of a single precursor material, such as OMTCS, without incorporating a porogen species. To this end, the initial deposition of the low-k dielectric material may be formed on the basis of a reduced process temperature, while a subsequent treatment, such as a UV treatment, may allow the adjustment of the final material characteristics without causing undue out-gassing of volatile organic components.
Public/Granted literature
- US20110027989A1 INCREASED DENSITY OF LOW-K DIELECTRIC MATERIALS IN SEMICONDUCTOR DEVICES BY APPLYING A UV TREATMENT Public/Granted day:2011-02-03
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