Invention Grant
US08742308B2 Imaging array device structure with separate charge storage capacitor layer
有权
成像阵列器件结构具有独立的电荷存储电容层
- Patent Title: Imaging array device structure with separate charge storage capacitor layer
- Patent Title (中): 成像阵列器件结构具有独立的电荷存储电容层
-
Application No.: US12968811Application Date: 2010-12-15
-
Publication No.: US08742308B2Publication Date: 2014-06-03
- Inventor: Jeffrey F. DeNatale , David J. Gulbransen , William E. Tennant , Alexandros P. Papavasiliou
- Applicant: Jeffrey F. DeNatale , David J. Gulbransen , William E. Tennant , Alexandros P. Papavasiliou
- Applicant Address: US CA Thousand Oaks
- Assignee: Teledyne Scientific & Imaging, LLC
- Current Assignee: Teledyne Scientific & Imaging, LLC
- Current Assignee Address: US CA Thousand Oaks
- Agency: Koppel, Patrick, Heybl & Philpott
- Main IPC: H01L27/00
- IPC: H01L27/00 ; G05D23/20 ; G01J1/46
Abstract:
An imaging array comprises a photodetector layer, a readout IC (ROIC) layer, and a charge storage capacitor layer which is distinct from the photodetector and ROIC layers; the layers are electrically interconnected to form the array. The capacitors within the charge storage capacitor layer are preferably micromachined; the charge storage capacitor layer can be an interposer layer or an outer layer.
Public/Granted literature
- US20120153122A1 Imaging Array With Separate Charge Storage Capacitor Layer Public/Granted day:2012-06-21
Information query
IPC分类:
