Invention Grant
US08742396B2 III nitride epitaxial substrate and deep ultraviolet light emitting device using the same
有权
III族氮化物外延衬底和使用其的深紫外发光器件
- Patent Title: III nitride epitaxial substrate and deep ultraviolet light emitting device using the same
- Patent Title (中): III族氮化物外延衬底和使用其的深紫外发光器件
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Application No.: US13739362Application Date: 2013-01-11
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Publication No.: US08742396B2Publication Date: 2014-06-03
- Inventor: Yoshikazu Ooshika
- Applicant: Dowa Electronics Materials Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: Dowa Electronics Materials Co., Ltd.
- Current Assignee: Dowa Electronics Materials Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2013-002657 20130110
- Main IPC: H01L29/12
- IPC: H01L29/12 ; H01L29/66
Abstract:
A III nitride epitaxial substrate which makes it possible to obtain a deep ultraviolet light emitting device with improved light output power is provided. A III nitride epitaxial substrate includes a substrate, an AlN buffer layer, a first superlattice laminate, a second superlattice laminate and a III nitride laminate in this order. The III nitride laminate includes an active layer including an AlαGa1-αN (0.03≦α) layer. The first superlattice laminate includes AlaGa1-aN layers and AlbGa1-bN (0.9
Public/Granted literature
- US20130181188A1 III NITRIDE EPITAXIAL SUBSTRATE AND DEEP ULTRAVIOLET LIGHT EMITTING DEVICE USING THE SAME Public/Granted day:2013-07-18
Information query
IPC分类:
