Invention Grant
US08742414B2 Composition for an oxide thin film, a preparation method of the composition, a method for forming an oxide thin film using the composition, an electronic device including the oxide thin film, and a semiconductor device including the oxide thin film
有权
用于氧化物薄膜的组合物，该组合物的制备方法，使用该组合物形成氧化物薄膜的方法，包括氧化物薄膜的电子器件以及包括该氧化物薄膜的半导体器件
- Patent Title: Composition for an oxide thin film, a preparation method of the composition, a method for forming an oxide thin film using the composition, an electronic device including the oxide thin film, and a semiconductor device including the oxide thin film
- Patent Title (中): 用于氧化物薄膜的组合物，该组合物的制备方法，使用该组合物形成氧化物薄膜的方法，包括氧化物薄膜的电子器件以及包括该氧化物薄膜的半导体器件
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Application No.: US13652677Application Date: 2012-10-16
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Publication No.: US08742414B2Publication Date: 2014-06-03
- Inventor: Hyun Jae Kim , Woong Hee Jeong , You Seung Rim
- Applicant: Industry-Academic Cooperation Foundation, Yonsei University
- Applicant Address: KR Seoul
- Assignee: Industry-Academic Cooperation Foundation, Yonsei University
- Current Assignee: Industry-Academic Cooperation Foundation, Yonsei University
- Current Assignee Address: KR Seoul
- Agency: Carter, DeLuca, Farrell & Schmidt LLP
- Priority: KR10-2011-0143833 20111227
- Main IPC: H01L29/12
- IPC: H01L29/12 ; H01L21/00 ; H01B1/06
Abstract:
Provided are a composition for an oxide thin film, a preparation method of the composition, a method for forming an oxide thin film using the composition, an electronic device including the oxide thin film, and a semiconductor device including the oxide thin film. The composition for the oxide thin film includes a metal precursor and nitric acid-based stabilizer. The metal precursor includes at least one of a metal nitrate, a metal nitride, and hydrates thereof.
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