Invention Grant
US08742423B2 Thin-film transistor array and image display device in which thin-film transistor array is used
有权
薄膜晶体管阵列和使用薄膜晶体管阵列的图像显示装置
- Patent Title: Thin-film transistor array and image display device in which thin-film transistor array is used
- Patent Title (中): 薄膜晶体管阵列和使用薄膜晶体管阵列的图像显示装置
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Application No.: US13232856Application Date: 2011-09-14
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Publication No.: US08742423B2Publication Date: 2014-06-03
- Inventor: Ryohei Matsubara , Mamoru Ishizaki
- Applicant: Ryohei Matsubara , Mamoru Ishizaki
- Applicant Address: JP
- Assignee: Toppan Printing Co., Ltd.
- Current Assignee: Toppan Printing Co., Ltd.
- Current Assignee Address: JP
- Agency: Squire Sanders (US) LLP
- Priority: JP2009-063795 20090317; JP2009-214224 20090916
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/15 ; H01L27/14 ; H01L29/423 ; H01L29/786 ; H01L29/417 ; H01L27/12
Abstract:
In a thin-film transistor array according to an embodiment of the present invention, thin-film transistors are disposed in a matrix array, the thin-film transistor including a gate electrode that is formed on a substrate, a gate insulating layer that is formed on the gate electrode, a source electrode that is formed on the gate insulating layer, a pixel electrode that is formed on the gate insulating layer, a drain electrode that is connected to the pixel electrode, and a semiconductor layer that is formed between the source electrode and the drain electrode, the gate electrode is connected to a gate line while the source electrode is connected to a source line, the thin-film transistor is formed within a region of the source line and the thin-film transistor array includes a stripe insulating film such that the source line and the semiconductor layer are covered with the stripe insulating film.
Public/Granted literature
- US20120001189A1 THIN-FILM TRANSISTOR ARRAY AND IMAGE DISPLAY DEVICE IN WHICH THIN-FILM TRANSISTOR ARRAY IS USED Public/Granted day:2012-01-05
Information query
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