A photo-coupler device includes a P-type substrate, a P-type epitaxial layer, an insulation layer, a plurality of shielding layers, a metal layer and a passivation layer. The P-type epitaxial layer is deposited on the P-type substrate and includes two conducting regions and a plurality of N+ electrode regions between the two conducting regions. The insulation layer is deposited on the P-type epitaxial layer. The shielding layers comprising first shielding layers and second shielding layers are deposited in the insulation layer in parallel in a horizontal direction, and the first shielding layers are arranged for correspondingly covering the two conducting regions, the second shielding layers are arranged for correspondingly covering the at least one of the N+ electrode regions. The metal layer is made of Ag and is deposited on the insulation layer. The passivation layer is deposited on the metal layer.