Invention Grant
US08742434B2 Semiconductor light emitting device, method of manufacturing the same, and lighting apparatus and display apparatus using the same 有权
半导体发光器件及其制造方法以及使用其的照明装置及显示装置

  • Patent Title: Semiconductor light emitting device, method of manufacturing the same, and lighting apparatus and display apparatus using the same
  • Patent Title (中): 半导体发光器件及其制造方法以及使用其的照明装置及显示装置
  • Application No.: US13535079
    Application Date: 2012-06-27
  • Publication No.: US08742434B2
    Publication Date: 2014-06-03
  • Inventor: Hideo Nagai
  • Applicant: Hideo Nagai
  • Applicant Address: JP Osaka
  • Assignee: Panasonic Corporation
  • Current Assignee: Panasonic Corporation
  • Current Assignee Address: JP Osaka
  • Priority: JP2003-275454 20030716
  • Main IPC: H01L27/15
  • IPC: H01L27/15
Semiconductor light emitting device, method of manufacturing the same, and lighting apparatus and display apparatus using the same
Abstract:
The present invention aims to provide a semiconductor light emitting device that may be firmly attached to a substrate with maintaining excellent light emitting efficiency, and a manufacturing method of the same, and a lighting apparatus and a display apparatus using the same.In order to achieve the above object, the semiconductor light emitting device according to the present invention includes a luminous layer, a light transmission layer disposed over a main surface of the luminous layer, and having depressions on a surface facing away from the luminous layer, and a transmission membrane disposed on the light transmission layer so as to follow contours of the depressions, and light from the luminous layer is irradiated so as to pass through the light transmission layer and the transmission membrane.
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