Invention Grant
- Patent Title: Light-emitting diode with embedded elements
- Patent Title (中): 具有嵌入元件的发光二极管
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Application No.: US12547428Application Date: 2009-08-25
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Publication No.: US08742441B2Publication Date: 2014-06-03
- Inventor: Ding-Yuan Chen , Wen-Chih Chiou , Chen-Hua Yu
- Applicant: Ding-Yuan Chen , Wen-Chih Chiou , Chen-Hua Yu
- Applicant Address: TW HsinChu
- Assignee: TSMC Solid State Lighting Ltd.
- Current Assignee: TSMC Solid State Lighting Ltd.
- Current Assignee Address: TW HsinChu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/72
- IPC: H01L29/72
Abstract:
A light-emitting diode (LED) device is provided. The LED device has a substrate and an LED structure overlying the substrate. Embedded elements are embedded within one or more layers of the LED structure. In an embodiment, the embedded elements include a dielectric material extending through the LED structure such that the embedded elements are surrounded by the LED structure. In another embodiment, the embedded elements only extend through an upper layer of the LED structure, or alternatively, partially through the upper layer of the LED structure. Another conductive layer may be formed over the upper layer of the LED structure and the embedded elements.
Public/Granted literature
- US20100059779A1 Light-Emitting Diode with Embedded Elements Public/Granted day:2010-03-11
Information query
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