Invention Grant
- Patent Title: Method for patterning an epitaxial substrate, a light emitting diode and a method for forming a light emitting diode
- Patent Title (中): 图案化外延衬底的方法,发光二极管和形成发光二极管的方法
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Application No.: US13450424Application Date: 2012-04-18
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Publication No.: US08742442B2Publication Date: 2014-06-03
- Inventor: Cheng-Hung Wei , Bo-Wen Lin , Ching-Yen Peng , Hao-Chung Kuo , Wen-Ching Hsu
- Applicant: Cheng-Hung Wei , Bo-Wen Lin , Ching-Yen Peng , Hao-Chung Kuo , Wen-Ching Hsu
- Applicant Address: TW Hsinchu
- Assignee: Sino-American Silicon Products Inc.
- Current Assignee: Sino-American Silicon Products Inc.
- Current Assignee Address: TW Hsinchu
- Agency: LeDPatent, LLC
- Agent Lun-Cong Dong
- Priority: TW100114649A 20110427
- Main IPC: H01L33/20
- IPC: H01L33/20

Abstract:
A method for patterning an epitaxial substrate includes: (a) forming an etch mask layer over an epitaxial substrate, and patterning the etch mask layer using a patterned cover mask layer to form the etch mask layer into a plurality of spaced apart mask patterns; and (b) etching the epitaxial substrate that is exposed from the mask patterns, and removing the mask patterns such that the epitaxial substrate is formed with a plurality of spaced apart substrate patterns.
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