Invention Grant
US08742457B2 Anti-fuses on semiconductor fins 有权
半导体鳍片上的防熔丝

Anti-fuses on semiconductor fins
Abstract:
A device includes a substrate, isolation regions at a surface of the substrate, and a semiconductor region over a top surface of the isolation regions. A conductive feature is disposed over the top surface of the isolation regions, wherein the conductive feature is adjacent to the semiconductor region. A dielectric material is disposed between the conductive feature and the semiconductor region. The dielectric material, the conductive feature, and the semiconductor region form an anti-fuse.
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