Invention Grant
- Patent Title: Anti-fuses on semiconductor fins
- Patent Title (中): 半导体鳍片上的防熔丝
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Application No.: US13328944Application Date: 2011-12-16
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Publication No.: US08742457B2Publication Date: 2014-06-03
- Inventor: Hsiao-Lan Yang
- Applicant: Hsiao-Lan Yang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/525
- IPC: H01L23/525

Abstract:
A device includes a substrate, isolation regions at a surface of the substrate, and a semiconductor region over a top surface of the isolation regions. A conductive feature is disposed over the top surface of the isolation regions, wherein the conductive feature is adjacent to the semiconductor region. A dielectric material is disposed between the conductive feature and the semiconductor region. The dielectric material, the conductive feature, and the semiconductor region form an anti-fuse.
Public/Granted literature
- US20130153960A1 Anti-Fuses on Semiconductor Fins Public/Granted day:2013-06-20
Information query
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