First and second PMOS transistors are defined over first and second p-type diffusion regions. First and second NMOS transistors are defined over first and second n-type diffusion regions. Each diffusion region is electrically connected to a common node. Gate electrodes are formed from conductive features that are each defined within any one gate level channel that is uniquely associated with and defined along one of a number of parallel gate electrode tracks. At least a portion of each of the first and second p-type diffusion regions are formed over a first common line of extent that extends perpendicular to the first parallel direction. The first and second n-type diffusion regions are formed in a spaced apart manner relative to the first parallel direction, such that no single line of extent that extends across the substrate perpendicular to the first parallel direction intersects both the first and second n-type diffusion regions.