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US08742466B2 Three-dimensional semiconductor device including a mold structure providing gap regions and an interconnection structure including a plurality of interconnection patterns formed in the gap regions 有权
三维半导体器件包括提供间隙区域的模具结构和包括形成在间隙区域中的多个互连图案的互连结构

Three-dimensional semiconductor device including a mold structure providing gap regions and an interconnection structure including a plurality of interconnection patterns formed in the gap regions
Abstract:
Provided are a three-dimensional semiconductor device and a method of fabricating the same. The three-dimensional semiconductor device may include a mold structure for providing gap regions and an interconnection structure including a plurality of interconnection patterns disposed in the gap regions. The mold structure may include interlayer molds defining upper surfaces and lower surfaces of the interconnection patterns and sidewall molds defining sidewalls of the interconnection patterns below the interlayer molds.
Abstract(Chinese):

提供一种三维半导体器件及其制造方法。 三维半导体器件可以包括用于提供间隙区域的模具结构和包括设置在间隙区域中的多个互连图案的互连结构。 模具结构可以包括限定互连图案的上表面和下表面的层间模具和限定层间模具下面的互连图案的侧壁的侧壁模具。

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