Invention Grant
- Patent Title: Semiconductor device and fabricating method of the same
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Application No.: US13355540Application Date: 2012-01-22
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Publication No.: US08742484B2Publication Date: 2014-06-03
- Inventor: Yasutaka Ozaki
- Applicant: Yasutaka Ozaki
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Fujitsu Patent Center
- Priority: JP2004-351905 20041203; JP2005-272595 20050920
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
Openings are formed by lithography and subsequent dry etching at the portions of a first protective film which correspond to connecting holes of second plugs which will be described later, namely at the portions thereof which align with first plugs, wherein the openings have a diameter greater than that of connecting holes by about 0.4 μm.
Public/Granted literature
- US20120112316A1 SEMICONDUCTOR DEVICE AND FABRICATING METHOD OF THE SAME Public/Granted day:2012-05-10
Information query
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