According to one embodiment, a nonvolatile semiconductor memory including a first gate insulating film formed on a channel region of a semiconductor substrate, a first particle layer formed in the first gate insulating film, a charge storage part formed on the first gate insulating film, a second gate insulating film which is formed on the charge storage part, a second particle layer formed in the second gate insulating film, and a gate electrode formed on the second gate insulating film. The first particle layer includes first conductive particles that satisfy Coulomb blockade conditions. The second particle layer includes second conductive particles that satisfy Coulomb blockade conditions and differs from the first conductive particles in average particle diameter.