Invention Grant
US08742495B2 High-voltage vertical transistor with a varied width silicon pillar
失效
具有不同宽度硅柱的高压立式晶体管
- Patent Title: High-voltage vertical transistor with a varied width silicon pillar
- Patent Title (中): 具有不同宽度硅柱的高压立式晶体管
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Application No.: US13793768Application Date: 2013-03-11
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Publication No.: US08742495B2Publication Date: 2014-06-03
- Inventor: Vijay Parthasarathy , Sujit Banerjee , Lin Zhu
- Applicant: Power Integrations, Inc.
- Applicant Address: US CA San Jose
- Assignee: Power Integrations, Inc.
- Current Assignee: Power Integrations, Inc.
- Current Assignee Address: US CA San Jose
- Agency: The Law Offices of Bradley J. Bereznak
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
In one embodiment, a vertical HVFET includes a pillar of semiconductor material a pillar of semiconductor material arranged in a loop layout having at least two substantially parallel and substantially linear fillet sections each having a first width, and at least two rounded sections, the rounded sections having a second width narrower than the first width, a source region of a first conductivity type being disposed at or near a top surface of the pillar, and a body region of a second conductivity type being disposed in the pillar beneath the source region. First and second dielectric regions are respectively disposed on opposite sides of the pillar, the first dielectric region being laterally surrounded by the pillar, and the second dielectric region laterally surrounding the pillar. First and second field plates are respectively disposed in the first and second dielectric regions.
Public/Granted literature
- US20130187219A1 High-Voltage Vertical Transistor With a Varied Width Silicon Pillar Public/Granted day:2013-07-25
Information query
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