Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12608751Application Date: 2009-10-29
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Publication No.: US08742499B2Publication Date: 2014-06-03
- Inventor: Shizuki Nakajima , Hiroyuki Nagai , Yuji Shirai , Hirokazu Nakajima , Chushiro Kusano , Yu Hasegawa , Chiko Yorita , Yasuo Osone
- Applicant: Shizuki Nakajima , Hiroyuki Nagai , Yuji Shirai , Hirokazu Nakajima , Chushiro Kusano , Yu Hasegawa , Chiko Yorita , Yasuo Osone
- Applicant Address: JP Nagaokakyo-shi, Kyoto
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Nagaokakyo-shi, Kyoto
- Agency: Miles & Stockbridge P.C.
- Priority: JP2008-283810 20081105; JP2009-097248 20090413; JP2009-198360 20090828
- Main IPC: H01L27/082
- IPC: H01L27/082 ; H01L27/088 ; H01L21/8222 ; H01L29/78
Abstract:
In a semiconductor chip in which LDMOSFET elements for power amplifier circuits used for a power amplifier module are formed, a source bump electrode is disposed on an LDMOSFET formation region in which a plurality of source regions, a plurality of drain regions and a plurality of gate electrodes for the LDMOSFET elements are formed. The source bump electrode is formed on a source pad mainly made of aluminum via a source conductor layer which is thicker than the source pad and mainly made of copper. No resin film is interposed between the source bump electrode and the source conductor layer.
Public/Granted literature
- US20100109052A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2010-05-06
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