Invention Grant
US08742502B2 Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
有权
用于提高使用累积电荷沉降谐波皱纹减少的MOSFET的线性度的方法和装置
- Patent Title: Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
- Patent Title (中): 用于提高使用累积电荷沉降谐波皱纹减少的MOSFET的线性度的方法和装置
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Application No.: US13277108Application Date: 2011-10-19
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Publication No.: US08742502B2Publication Date: 2014-06-03
- Inventor: Christopher N. Brindle , Jie Deng , Alper Genc , Chieh-Kai Yang
- Applicant: Christopher N. Brindle , Jie Deng , Alper Genc , Chieh-Kai Yang
- Applicant Address: US CA San Diego
- Assignee: Peregrine Semiconductor Corporation
- Current Assignee: Peregrine Semiconductor Corporation
- Current Assignee Address: US CA San Diego
- Agency: Jaquez & Land LLP
- Agent Martin J. Jaquez, Esq.
- Main IPC: H01L27/12
- IPC: H01L27/12
Abstract:
A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.
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