One or more embodiments relate to an apparatus comprising: a first transistor including a channel in a fin; and a second transistor including a channel in a fin, the channel of the first transistor being doped with a first dopant of a first polarity and counter-doped with a second dopant of a second polarity opposite to the first polarity, a concentration of the first dopant being approximately equal to a concentration of the second dopant, wherein the first transistor and the second transistor are of a same conductivity type.