Invention Grant
- Patent Title: Apparatus and method for FinFETs
- Patent Title (中): FinFET器件和方法
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Application No.: US13410073Application Date: 2012-03-01
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Publication No.: US08742509B2Publication Date: 2014-06-03
- Inventor: Yi-Jing Lee , You-Ru Lin , Cheng-Tien Wan , Cheng-Hsien Wu , Chih-Hsin Ko
- Applicant: Yi-Jing Lee , You-Ru Lin , Cheng-Tien Wan , Cheng-Hsien Wu , Chih-Hsin Ko
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater and Matsil, L.L.P.
- Main IPC: H01L21/70
- IPC: H01L21/70
Abstract:
A FinFET comprises an isolation region formed in a substrate, a cloak-shaped active region formed over the substrate, wherein the cloak-shaped active region has an upper portion protruding above a top surface of the isolation region. In addition, the FinFET comprises a gate electrode wrapping the channel of the cloak-shaped active region.
Public/Granted literature
- US20130228875A1 Apparatus and Method for FinFETs Public/Granted day:2013-09-05
Information query
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