Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the semiconductor device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14022565Application Date: 2013-09-10
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Publication No.: US08742521B2Publication Date: 2014-06-03
- Inventor: Makoto Ueki , Naoya Inoue , Yoshihiro Hayashi
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Priority: JP2011-049236 20110307
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L21/02 ; H01L23/552 ; H01L21/00
Abstract:
A semiconductor device in which MRAM is formed in a wiring layer A contained in a multilayered wiring layer, the MRAM having at least two first magnetization pinning layers in contact with a first wiring formed in a wiring layer and insulated from each other, a free magnetization layer overlapping the two first magnetization pinning layers in a plan view, and connected with the first magnetization pinning layers, a non-magnetic layer situated over the free magnetization layer, and a second magnetization pinning layer situated over the non-magnetic layer.
Public/Granted literature
- US20140080228A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE Public/Granted day:2014-03-20
Information query
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