Invention Grant
- Patent Title: Method of making a semiconductor radiation detector
- Patent Title (中): 制造半导体辐射探测器的方法
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Application No.: US13442957Application Date: 2012-04-10
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Publication No.: US08742522B2Publication Date: 2014-06-03
- Inventor: Handong Li , Michael Prokesch , John F. Eger
- Applicant: Handong Li , Michael Prokesch , John F. Eger
- Applicant Address: US PA Saxonburg
- Assignee: eV Products, Inc.
- Current Assignee: eV Products, Inc.
- Current Assignee Address: US PA Saxonburg
- Agency: Clark Hill PLC
- Main IPC: H01L27/14
- IPC: H01L27/14

Abstract:
A method of making a semiconductor radiation detector wherein the metal layers which serve as the cathode and anode electrodes are recessed from the designated prospective dice lines which define the total upper and lower surface areas for each detector such that the dicing blade will not directly engage the metal during dicing and therefore prevent metal from intruding upon (smearing) the vertical side walls of the detector substrate.
Public/Granted literature
- US20130264669A1 METHOD OF MAKING A SEMICONDUCTOR RADIATION DETECTOR Public/Granted day:2013-10-10
Information query
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