Invention Grant
- Patent Title: Wavelength sensitive photodiode employing shorted junction
- Patent Title (中): 使用短路结的波长敏感光电二极管
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Application No.: US13768024Application Date: 2013-02-15
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Publication No.: US08742523B2Publication Date: 2014-06-03
- Inventor: Henry Litzmann Edwards , Dimitar Trifonov Trifonov
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L27/14
- IPC: H01L27/14

Abstract:
A semiconductor device contains a photodiode which has a plurality of p-n junctions disposed in a stack. Two contact structures on the semiconductor device are connected across at least one of the junctions to allow electrical connection to an external detection circuit, so that signal current from incident light on the photodiode which generates electron-hole pairs across the connected junction may be sensed by the external detection circuit. At least one of the junctions is electrically shorted at the semiconductor device, so that signal current from the shorted junction may not be sensed by the external detection circuit.
Public/Granted literature
- US20130207211A1 WAVELENGTH SENSITIVE PHOTODIODE EMPLOYING SHORTED JUNCTION Public/Granted day:2013-08-15
Information query
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