Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13910145Application Date: 2013-06-05
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Publication No.: US08742537B2Publication Date: 2014-06-03
- Inventor: Takao Kaji , Katsuhito Sasaki , Takaaki Kodaira , Yuuki Doi , Minako Oritsu
- Applicant: Lapis Semiconductor Co., Ltd.
- Applicant Address: JP Yokohama
- Assignee: Lapis Semiconductor Co., Ltd.
- Current Assignee: Lapis Semiconductor Co., Ltd.
- Current Assignee Address: JP Yokohama
- Agency: Volentine & Whitt, PLLC
- Priority: JP2012-134998 20120614
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L29/06
Abstract:
Disclosed is a semiconductor device including: a semiconductor substrate; first and second element isolating trenches that are formed in one main surface of the semiconductor substrate separately from each other; a first insulating material that is formed within the first element isolating trench; a plurality of first element formation regions that are surrounded by the first element isolating trench; first semiconductor elements that are respectively formed in the first element formation regions; a second insulating material that is formed within the second element isolating trench; a second element formation region that is surrounded by the second element isolating trench; a second semiconductor element that is formed in the second element formation region; and a stress relaxation structure that is formed between the first element isolating trench and the second element isolating trench.
Public/Granted literature
- US20130334655A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2013-12-19
Information query
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