Invention Grant
- Patent Title: Insulation layer to improve capacitor breakdown voltage
- Patent Title (中): 绝缘层提高电容器击穿电压
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Application No.: US11216715Application Date: 2005-08-31
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Publication No.: US08742540B2Publication Date: 2014-06-03
- Inventor: Yao Hsiang Liang
- Applicant: Yao Hsiang Liang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater and Matsil, L.L.P.
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A metal-insulator-metal (MIM) capacitor and a method for forming the same are provided. The MIM capacitor includes an insulator on a bottom metal plate, a top metal plate on the insulator, a dielectric layer on the top metal plate and on at least sidewalls of the top metal plate and the insulator, and an anti-reflective coating (ARC) layer over the top metal plate and the bottom metal plate. The dielectric layer preferably extends on an exposed portion of the bottom metal plate not covered by the top metal plate and the insulator.
Public/Granted literature
- US20070045702A1 Insulation layer to improve capacitor breakdown voltage Public/Granted day:2007-03-01
Information query
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