Invention Grant
US08742559B2 Manufacturing method of semiconductor device, and semiconductor device
有权
半导体器件的制造方法以及半导体器件
- Patent Title: Manufacturing method of semiconductor device, and semiconductor device
- Patent Title (中): 半导体器件的制造方法以及半导体器件
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Application No.: US13419899Application Date: 2012-03-14
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Publication No.: US08742559B2Publication Date: 2014-06-03
- Inventor: Noriyuki Takahashi
- Applicant: Noriyuki Takahashi
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Mattingly & Malur, PC
- Priority: JP2011-057832 20110316
- Main IPC: H01L23/02
- IPC: H01L23/02 ; H01L23/495 ; H01L31/048 ; H01L23/40

Abstract:
To suppress the reduction in reliability of a resin-sealed semiconductor device. A first cap (member) and a second cap (member) with a cavity (space formation portion) are superimposed and bonded together to form a sealed space. A semiconductor including a sensor chip (semiconductor chip) and wires inside the space is manufactured in the following way. In a sealing step of sealing a joint part between the caps, a sealing member is formed of resin such that an entirety of an upper surface of the second cap and an entirety of a lower surface of the first cap are respectively exposed. Thus, in the sealing step, the pressure acting in the direction of crushing the second cap can be decreased.
Public/Granted literature
- US20120235308A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Public/Granted day:2012-09-20
Information query
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