Disclosed is a semiconductor device that comprises a first insulating film provided on a main face of a semiconductor substrate; a first pedestal provided at a first wiring layer on the first insulating layer; a second insulating film provided on the first wiring layer; and a second pedestal provided at a second wiring layer on the second insulating film, wherein, when the first and second pedestals are projected in a direction perpendicular to the main face onto a plane parallel to the main face, the second pedestal is larger than the first pedestal, and the whole of the first pedestal is disposed at an inside of the second pedestal.