Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13415338Application Date: 2012-03-08
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Publication No.: US08742584B2Publication Date: 2014-06-03
- Inventor: Daisuke Sakurai
- Applicant: Daisuke Sakurai
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Panasonic Patent Center
- Priority: JP2009-262761 20091118
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/522 ; H01L29/40

Abstract:
An externally connecting electrode is formed above a semiconductor substrate with interlayer insulation films and disposed in the externally connecting electrode. The externally connecting electrode has a pad metal layer whose upper surface is exposed, a first metal layer formed between the pad metal layer and the semiconductor substrate, and at least two first vias which penetrate the interlayer insulation film and electrically connect the pad metal layer to the first metal layer and are formed in the interlayer insulation film. The maximum interval b between the first vias is larger than the width a of the pad metal layer.
Public/Granted literature
- US20120168961A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-07-05
Information query
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