Invention Grant
- Patent Title: Stacked multilayer structure and manufacturing method thereof
- Patent Title (中): 堆叠多层结构及其制造方法
-
Application No.: US14057878Application Date: 2013-10-18
-
Publication No.: US08742586B2Publication Date: 2014-06-03
- Inventor: Makoto Mizukami , Takeshi Kamigaichi
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-173445 20070629
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A stacked multilayer structure according to an embodiment of the present invention comprises: a stacked layer part including a plurality of conducting layers and a plurality of insulating layers, said plurality of insulating layers being stacked alternately with each layer of said plurality of conducting layers, one of said plurality of insulating layers being a topmost layer among said plurality of conducting layers and said plurality of insulating layers; and a plurality of contacts, each contact of said plurality of contacts being formed from said topmost layer and each contact of said plurality of contacts being in contact with a respective conducting layer of said plurality of conducting layers, a side surface of each of said plurality of contacts being insulated from said plurality of conducting layers via an insulating film.
Public/Granted literature
- US20140042620A1 STACKED MULTILAYER STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2014-02-13
Information query
IPC分类: