Invention Grant
- Patent Title: Semiconductor device including a plug and method for manufacturing the same
- Patent Title (中): 包括插头的半导体装置及其制造方法
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Application No.: US13424791Application Date: 2012-03-20
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Publication No.: US08742592B2Publication Date: 2014-06-03
- Inventor: Satoshi Wakatsuki , Ichiro Mizushima , Atsuko Sakata , Masayuki Kitamura
- Applicant: Satoshi Wakatsuki , Ichiro Mizushima , Atsuko Sakata , Masayuki Kitamura
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2011-207829 20110922
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
According to one embodiment, a method for manufacturing a semiconductor device includes: forming a silicon oxide film on a semiconductor substrate; forming a via in the silicon oxide film; forming a contact layer inside the via; forming a silicon layer on the contact layer; and forming a tungsten film embedded in the via by making a tungsten-containing gas react with the silicon layer.
Public/Granted literature
- US20130075912A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2013-03-28
Information query
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