Invention Grant
- Patent Title: Semiconductor structure and method for making same
- Patent Title (中): 半导体结构及其制造方法
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Application No.: US13253112Application Date: 2011-10-05
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Publication No.: US08742598B2Publication Date: 2014-06-03
- Inventor: Dirk Meinhold
- Applicant: Dirk Meinhold
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agent Philip Schlazer
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L29/788 ; H01L23/02
Abstract:
One or more embodiments relate to a semiconductor structure, comprising: a conductive pad, the conductive pad including a plurality of laterally spaced apart gaps diposed at least partially through the conductive pad.
Public/Granted literature
- US20130087930A1 Semiconductor structure and method for making same Public/Granted day:2013-04-11
Information query
IPC分类:
