Invention Grant
- Patent Title: Divider circuit and semiconductor device using the same
- Patent Title (中): 分频电路和使用其的半导体器件
-
Application No.: US13473658Application Date: 2012-05-17
-
Publication No.: US08742804B2Publication Date: 2014-06-03
- Inventor: Masashi Fujita , Yukio Maehashi
- Applicant: Masashi Fujita , Yukio Maehashi
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2011-118125 20110526
- Main IPC: H03B19/06
- IPC: H03B19/06

Abstract:
A semiconductor device with low power consumption and a small area is provided. By using a transistor including an oxide semiconductor for a channel as a transistor included in a flip-flop circuit, a divider circuit in which the number of transistors is small, power consumption is low, and the area is small can be achieved. By using the divider circuit, a semiconductor device which operates stably and is highly reliable can be provided.
Public/Granted literature
- US20120299626A1 DIVIDER CIRCUIT AND SEMICONDUCTOR DEVICE USING THE SAME Public/Granted day:2012-11-29
Information query