Invention Grant
- Patent Title: Level shift circuit
- Patent Title (中): 电平移位电路
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Application No.: US13752501Application Date: 2013-01-29
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Publication No.: US08742822B2Publication Date: 2014-06-03
- Inventor: Kosuke Yanagidaira , Shouichi Ozaki , Kenro Kubota
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H03L5/00
- IPC: H03L5/00

Abstract:
According to one embodiment, a first CMOS inverter receives an input signal corresponding to a first power supply voltage, and is driven by a second power supply voltage which is smaller than the first power supply voltage; a second CMOS inverter is connected to a rear stage of the first CMOS inverter, and is driven by the second power supply voltage; a first driving adjustment circuit adjusts a current driving force of a low level output of the first CMOS inverter; and a second driving adjustment circuit adjusts a current driving force of a low level output of the second CMOS inverter.
Public/Granted literature
- US20140049308A1 LEVEL SHIFT CIRCUIT Public/Granted day:2014-02-20
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