Invention Grant
- Patent Title: Power gating circuit
- Patent Title (中): 电源门控电路
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Application No.: US13067319Application Date: 2011-05-24
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Publication No.: US08742827B2Publication Date: 2014-06-03
- Inventor: Nicolaas Klarinus Johannes Van Winkelhoff , Mikael Brun
- Applicant: Nicolaas Klarinus Johannes Van Winkelhoff , Mikael Brun
- Applicant Address: GB Cambridge
- Assignee: ARM Limited
- Current Assignee: ARM Limited
- Current Assignee Address: GB Cambridge
- Agency: Nixon & Vanderhye P.C.
- Main IPC: H03K17/687
- IPC: H03K17/687

Abstract:
A functional circuit is coupled to a power supply conductor by at least one power gating transistor. A switching device applies a gate drive voltage to a gate terminal of the power gating transistor via a resistive element. The power gating transistor provides a Miller capacitance between its drain and gate terminals. The Miller capacitance, the resistance of the resistive element, and the drive strength of the switching device are configured such that, in response to the switching device switching the gate drive voltage to allow more current to pass through the power gating transistor, the Miller capacitance provides a feedback mechanism competing against the switching device to reduce the slew rate of the gate drive voltage such that the current passing between the power gate supply conductor and the functional circuit through the power gating transistor is less than the saturation current of the power gating transistor.
Public/Granted literature
- US20120299636A1 Power gating circuit Public/Granted day:2012-11-29
Information query
IPC分类: