Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13601369Application Date: 2012-08-31
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Publication No.: US08742837B2Publication Date: 2014-06-03
- Inventor: Je Il Ryu
- Applicant: Je Il Ryu
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Patent Ltd.
- Priority: KR10-2011-0112117 20111031
- Main IPC: G05F1/10
- IPC: G05F1/10 ; H03K19/00

Abstract:
A semiconductor device includes a high voltage generator for generating a high voltage by raising a power source voltage, a transfer circuit for transferring the high voltage to an internal circuit in response to a transfer signal, and a first discharge circuit for discharging the high voltage of an output node of the high voltage generator or the high voltage of an input node or output node of the transfer circuit when the power source voltage drops.
Public/Granted literature
- US20130106483A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-05-02
Information query
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