Invention Grant
- Patent Title: Surface acoustic wave resonator, surface acoustic wave oscillator, and surface acoustic wave module unit
- Patent Title (中): 表面声波谐振器,表面声波振荡器和表面声波模块单元
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Application No.: US13630490Application Date: 2012-09-28
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Publication No.: US08742861B2Publication Date: 2014-06-03
- Inventor: Kunihito Yamanaka
- Applicant: Seiko Epson Corporation
- Applicant Address: JP Tokyo
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Main IPC: H03H9/25
- IPC: H03H9/25

Abstract:
It is possible to reduce the size of a surface acoustic wave resonator by enhancing the Q value. In a surface acoustic wave resonator in which an IDT having electrode fingers for exciting surface acoustic waves is formed on a crystal substrate, a line occupying ratio is defined as a value obtained by dividing the width of one electrode finger by the distance between the center lines of the gaps between one electrode finger and the electrode fingers adjacent to both sides thereof, and the IDT includes a region formed by gradually changing the line occupying ratio from the center to both edges so that the frequency gradually becomes lower from the center to both edges than the frequency at the center of the IDT.
Public/Granted literature
- US20130021110A1 SURFACE ACOUSTIC WAVE RESONATOR, SURFACE ACOUSTIC WAVE OSCILLATOR, AND SURFACE ACOUSTIC WAVE MODULE UNIT Public/Granted day:2013-01-24
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