Invention Grant
US08743252B2 Solid-state imaging device for high density CMOS image sensor, and driving method thereof
失效
用于高密度CMOS图像传感器的固态成像装置及其驱动方法
- Patent Title: Solid-state imaging device for high density CMOS image sensor, and driving method thereof
- Patent Title (中): 用于高密度CMOS图像传感器的固态成像装置及其驱动方法
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Application No.: US12720872Application Date: 2010-03-10
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Publication No.: US08743252B2Publication Date: 2014-06-03
- Inventor: Kazufumi Watanabe
- Applicant: Kazufumi Watanabe
- Applicant Address: JP
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP
- Agency: Sheridan Ross P.C.
- Priority: JP2009-065391 20090318
- Main IPC: H04N3/14
- IPC: H04N3/14 ; H04N5/335

Abstract:
A solid-state imaging device according to an embodiment of the present invention includes plural pixels, in which each pixel includes: a transfer transistor that transfers electric charge from a photoelectric conversion section to a floating diffusion section; a reset transistor that resets the floating diffusion section; a amplifying transistor that outputs a signal based on the electric charge held by the floating diffusion section; a selection transistor that is provided at the output side of the amplifying transistor and selects a pixel; and a charge storage capacitor that is provided between the amplifying transistor and the selection transistor and stores the quantity of electric charge on the basis the quantity of the electric charge held by the floating diffusion section through the charge-discharge behavior of electric charge through a current source.
Public/Granted literature
- US20100238332A1 SOLID-STATE IMAGING DEVICE, DRIVING METHOD THEREOF, AND ELECTRONIC APPARATUS Public/Granted day:2010-09-23
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