Invention Grant
- Patent Title: Sharing stacked BJT clamps for system level ESD protection
- Patent Title (中): 共享堆叠BJT夹具，实现系统级ESD保护
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Application No.: US13451312Application Date: 2012-04-19
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Publication No.: US08743516B2Publication Date: 2014-06-03
- Inventor: Chai Ean Gill , Rouying Zhan
- Applicant: Chai Ean Gill , Rouying Zhan
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Terrile, Cannatti, Chambers & Holland, LLP
- Agent Michael Rocco Cannatti
- Main IPC: H02H9/00
- IPC: H02H9/00 ; H02H9/04 ; H01L27/02
Abstract:
An area-efficient, high voltage, dual polarity ESD protection device (200) is provided for protecting multiple pins (30, 40) against ESD events by using a plurality of stacked NPN devices (38, 48, 39) which have separately controllable breakdown voltages and which share one or common NPN devices (39), thereby reducing the footprint of the high voltage ESD protection circuits without reducing robustness and functionality.
Public/Granted literature
- US20130279051A1 Sharing Stacked BJT Clamps for System Level ESD Protection Public/Granted day:2013-10-24
Information query
