Invention Grant
- Patent Title: ESD protection circuit
- Patent Title (中): ESD保护电路
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Application No.: US13529075Application Date: 2012-06-21
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Publication No.: US08743517B2Publication Date: 2014-06-03
- Inventor: Fu-Yi Tsai , Yan-Hua Peng , Chia-Ku Tsai , Ming-Dou Ker
- Applicant: Fu-Yi Tsai , Yan-Hua Peng , Chia-Ku Tsai , Ming-Dou Ker
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: Faraday Technology Corp.
- Current Assignee: Faraday Technology Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: TW100129128A 20110815
- Main IPC: H02H3/22
- IPC: H02H3/22
Abstract:
ESD protection circuit including a resistor and at least one protection transistor; the resistor coupled between an I/O signal node and an internal node of internal circuit, the protection transistors serially coupled between the internal node and a voltage node with each protection transistor comprising a gate and a drain which is coupled to the gate.
Public/Granted literature
- US20130044397A1 ESD PROTECTION CIRCUIT Public/Granted day:2013-02-21
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