Invention Grant
- Patent Title: Method and structure for ultra-high density, high data rate ferroelectric storage disk technology using stabilization by a surface conducting layer
- Patent Title (中): 采用表面导电层稳定化的超高密度,高数据速率的铁电存储盘技术的方法和结构
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Application No.: US13364759Application Date: 2012-02-02
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Publication No.: US08743586B2Publication Date: 2014-06-03
- Inventor: Dennis M. Newns
- Applicant: Dennis M. Newns
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: McGinn IP Law Group, PLLC
- Agent Vazken Alexanian
- Main IPC: G11C11/22
- IPC: G11C11/22

Abstract:
A electrometric access head includes a supporting substrate and a plurality of read elements mounted on the supporting substrate. Each read element includes an electrometric sensor for detection of a sign of polarization of domains within a ferroelectric data layer of a ferroelectric storage medium. The ferroelectric data layer serves as a layer for storing information as bits defined by the signs of polarization of domains within the ferroelectric data layer, each polarized domain including a volume dipole polarization within the ferroelectric data layer and including an area of bound charge on and adjacent to a surface of the ferroelectric data layer.
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