According to one embodiment, a semiconductor memory device includes first cells, first lines, second lines, a first cell array, and a signal driver. The first cell has in either a first state or a second state. Retention time in the second state is longer than in the first state. The first cell array has the first cells formed in a matrix the individuals. The first cells are electrically connected by the first, second lines. The signal driver drives the first cells. The signal driver causes the first cells to transition to either the first state or the second state by controlling any one of a voltage, a current, and a charge amount applied to the first cells, or a combination of these, and waveforms of the voltage, current, and charge amount and/or the length of transfer time of at least one of the voltage, current, and charge amount.