Disclosed herein is a resistance-change memory device including a bit line; a voltage supplying layer; a memory element connected between the bit line and the voltage supplying layer, a resistance value of the memory element being changed in accordance with an applied voltage; and a drive controlling circuit causing a first current to flow through the bit line and causing a second current smaller than the first current to flow through the bit line, thereby controlling a resistance decreasing operation in which the memory element is made to transit from a high resistance state to a low resistance state by using the second current.