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US08743600B2 Processors and systems using cell-refreshed phase-change memory 有权
使用单元更新相变存储器的处理器和系统

Processors and systems using cell-refreshed phase-change memory
Abstract:
Systems in which PCM is used, including memory systems, as well as methods for operating such systems. A comparison of PCM memory elements storing logical values to a trigger resistance or to each other can be used to determine the extent of resistance drift since the PCM memory elements were last written. If the comparison determines that the resistance drift has passed a sense margin threshold or a trigger resistance, a memory refresh is triggered and pre-drift resistances corresponding to the stored logical values are written to the PCM memory elements.
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