Invention Grant
- Patent Title: Processors and systems using cell-refreshed phase-change memory
- Patent Title (中): 使用单元更新相变存储器的处理器和系统
-
Application No.: US13869074Application Date: 2013-04-24
-
Publication No.: US08743600B2Publication Date: 2014-06-03
- Inventor: Wolfgang Hokenmaier
- Applicant: Being Advanced Memory Corporation
- Applicant Address: US VT Williston
- Assignee: Being Advanced Memory Corporation
- Current Assignee: Being Advanced Memory Corporation
- Current Assignee Address: US VT Williston
- Agent Robert O. Groover, III; Seth A. Horwitz; Gwendolyn S. S. Groover
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00

Abstract:
Systems in which PCM is used, including memory systems, as well as methods for operating such systems. A comparison of PCM memory elements storing logical values to a trigger resistance or to each other can be used to determine the extent of resistance drift since the PCM memory elements were last written. If the comparison determines that the resistance drift has passed a sense margin threshold or a trigger resistance, a memory refresh is triggered and pre-drift resistances corresponding to the stored logical values are written to the PCM memory elements.
Public/Granted literature
- US20130336048A1 Processors and Systems Using Cell-Refreshed Phase-Change Memory Public/Granted day:2013-12-19
Information query