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US08743622B2 Memory devices and programming methods that program a memory cell with a data value, read the data value from the memory cell and reprogram the memory cell with the read data value 有权
使用数据值对存储器单元进行编程的存储器件和编程方法，从存储器单元读取数据值并用读取的数据值重新编程存储器单元

  • Patent Title: Memory devices and programming methods that program a memory cell with a data value, read the data value from the memory cell and reprogram the memory cell with the read data value
  • Patent Title (中): 使用数据值对存储器单元进行编程的存储器件和编程方法，从存储器单元读取数据值并用读取的数据值重新编程存储器单元
  • Application No.: US13349652
    Application Date: 2012-01-13
  • Publication No.: US08743622B2
    Publication Date: 2014-06-03
  • Inventor: Toru Tanzawa
  • Applicant: Toru Tanzawa
  • Applicant Address: US ID Boise
  • Assignee: Micron Technology, Inc.
  • Current Assignee: Micron Technology, Inc.
  • Current Assignee Address: US ID Boise
  • Agency: Dicke, Billig & Czaja, PLLC
  • Main IPC: G11C16/04
  • IPC: G11C16/04
Memory devices and programming methods that program a memory cell with a data value, read the data value from the memory cell and reprogram the memory cell with the read data value
Abstract:
Memory devices and programming methods are disclosed. In an embodiment of one such method, a memory cell is programmed to at least a first threshold voltage. After programming the memory cell to at least the first threshold voltage, the memory cell is read, using a read voltage that is less than the first threshold voltage. After reading the memory cell, the memory cell is programmed to at least a second threshold voltage that is greater than the first threshold voltage.
Abstract(Chinese):

公开了存储器件和编程方法。 在一种这样的方法的实施例中，存储器单元被编程为至少第一阈值电压。 在将存储器单元编程为至少第一阈值电压之后，使用小于第一阈值电压的读取电压来读取存储器单元。 在读取存储器单元之后，存储单元被编程为大于第一阈值电压的至少第二阈值电压。

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