Invention Grant
- Patent Title: Controlling a non-volatile memory
- Patent Title (中): 控制非易失性存储器
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Application No.: US13030156Application Date: 2011-02-18
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Publication No.: US08743626B2Publication Date: 2014-06-03
- Inventor: Yanyi L. Wong , Troy N. Gilliland
- Applicant: Yanyi L. Wong , Troy N. Gilliland
- Applicant Address: US CA Mountain View
- Assignee: Synopsys, Inc.
- Current Assignee: Synopsys, Inc.
- Current Assignee Address: US CA Mountain View
- Agency: Baker Botts L.L.P.
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
Controlling a non-volatile memory. The non-volatile memory includes a plurality of memory cells in an integrated circuit substrate. The non-volatile memory also includes a high-voltage node in power-transmissive communication with the plurality of memory cells. Further, the non-volatile memory includes an intermediate-voltage node in power-transmissive communication with the plurality of memory cells. Moreover, the non-volatile memory includes a counter-doped-gate device, coupled within the integrated circuit substrate, in power-transmissive communication between the high-voltage node and the intermediate-voltage node.
Public/Granted literature
- US20120213007A1 CONTROLLING A NON-VOLATILE MEMORY Public/Granted day:2012-08-23
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