Invention Grant
- Patent Title: Memory device including redundant memory cell block
- Patent Title (中): 存储器件包括冗余存储器单元块
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Application No.: US13620280Application Date: 2012-09-14
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Publication No.: US08743637B2Publication Date: 2014-06-03
- Inventor: Tatsuru Matsuo
- Applicant: Tatsuru Matsuo
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Arent Fox LLP
- Priority: JP2011-270039 20111209
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
A clock signal is supplied to a first repair flag flip-flop, a second repair flag flip-flop, a first repair data flip-flop group, and a second repair data flip-flop group to serially transfer a second repair flag and a first repair flag stored in a non-volatile memory to the second repair flag flip-flop and the first repair flag flip-flop. Subsequently, repair data stored in the non-volatile memory is serially output to the first repair data flip-flop group, and repair data of the first repair data flip-flop group and the second repair data flip-flop group is serially transferred.
Public/Granted literature
- US20130148451A1 MEMORY DEVICE INCLUDING REDUNDANT MEMORY CELL BLOCK Public/Granted day:2013-06-13
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