Invention Grant
US08743637B2 Memory device including redundant memory cell block 有权
存储器件包括冗余存储器单元块

  • Patent Title: Memory device including redundant memory cell block
  • Patent Title (中): 存储器件包括冗余存储器单元块
  • Application No.: US13620280
    Application Date: 2012-09-14
  • Publication No.: US08743637B2
    Publication Date: 2014-06-03
  • Inventor: Tatsuru Matsuo
  • Applicant: Tatsuru Matsuo
  • Applicant Address: JP Kawasaki
  • Assignee: Fujitsu Limited
  • Current Assignee: Fujitsu Limited
  • Current Assignee Address: JP Kawasaki
  • Agency: Arent Fox LLP
  • Priority: JP2011-270039 20111209
  • Main IPC: G11C29/00
  • IPC: G11C29/00
Memory device including redundant memory cell block
Abstract:
A clock signal is supplied to a first repair flag flip-flop, a second repair flag flip-flop, a first repair data flip-flop group, and a second repair data flip-flop group to serially transfer a second repair flag and a first repair flag stored in a non-volatile memory to the second repair flag flip-flop and the first repair flag flip-flop. Subsequently, repair data stored in the non-volatile memory is serially output to the first repair data flip-flop group, and repair data of the first repair data flip-flop group and the second repair data flip-flop group is serially transferred.
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