Invention Grant
- Patent Title: Static read only memory device which consumes low stand-by leakage current
- Patent Title (中): 静态只读存储器件，消耗低待机漏电流
-
Application No.: US13401830Application Date: 2012-02-21
-
Publication No.: US08743647B2Publication Date: 2014-06-03
- Inventor: Sanjiv Kumar Jain , Vikas Gadi
- Applicant: Sanjiv Kumar Jain , Vikas Gadi
- Applicant Address: US CA Mountain View
- Assignee: Synopsys, Inc.
- Current Assignee: Synopsys, Inc.
- Current Assignee Address: US CA Mountain View
- Agency: Baker Botts L.L.P.
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
An electronic device comprises a semiconductor memory cell having a bistable bit storage circuit having first and second power contact points. A first switch is coupled to the first power contact point to receive a first voltage. A second switch coupled to the second power contact point to receive a second voltage. Circuitry is provided for turning off the first and second switches to decouple the respective first and second voltages from the respective first and second power contact points, during stand-by operation of the electronic device.
Public/Granted literature
- US20130219200A1 STATIC READ ONLY MEMORY DEVICE WHICH CONSUMES LOW STAND-BY LEAKAGE CURRENT Public/Granted day:2013-08-22
Information query
