Invention Grant
- Patent Title: Block repair scheme
- Patent Title (中): 块修复方案
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Application No.: US13306879Application Date: 2011-11-29
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Publication No.: US08743650B2Publication Date: 2014-06-03
- Inventor: Takumi Nasu , Takuya Nakanishi
- Applicant: Takumi Nasu , Takuya Nakanishi
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder, P.C.
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
Systems, memory arrays and methods (e.g., methods of block repair) are provided. One such system includes a memory array including a memory bank including a plurality of sections, wherein each of the plurality of sections includes at least one redundant row. Further embodiments provide for mapping non-redundant rows associated with a section associated with a block failure to distributed redundant rows.
Public/Granted literature
- US20120069691A1 BLOCK REPAIR SCHEME Public/Granted day:2012-03-22
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