Invention Grant
US08744349B2 Multi-stack semiconductor integrated circuit device 有权
多层半导体集成电路器件

Multi-stack semiconductor integrated circuit device
Abstract:
The invention relates to a multi-stack semiconductor integrated circuit device where communication between semiconductor chips can be efficiently carried out by bypassing a number of chips. Each semiconductor chip that forms a multi-stack semiconductor integrated circuit device having a stack structure where four or more semiconductor chips having the same shape are stacked on top of each other is provided with: a first coil for transmission/reception for communication between chips over a long distance; and a second coil for transmission/reception for communication between chips over a short distance, of which the size is smaller than that of the above-described first coil for transmission/reception.
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