Invention Grant
US08745294B2 Dynamic random access memory for a semiconductor storage device-based system
失效
一种基于半导体存储设备的系统的动态随机存取存储器
- Patent Title: Dynamic random access memory for a semiconductor storage device-based system
- Patent Title (中): 一种基于半导体存储设备的系统的动态随机存取存储器
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Application No.: US13078048Application Date: 2011-04-01
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Publication No.: US08745294B2Publication Date: 2014-06-03
- Inventor: Byungcheol Cho
- Applicant: Byungcheol Cho
- Applicant Address: KR Seoul
- Assignee: Taejin Info Tech Co., Ltd.
- Current Assignee: Taejin Info Tech Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Saliwanchik, Lloyd & Eisenschenk, P.A.
- Main IPC: G06F13/14
- IPC: G06F13/14 ; G06F13/00

Abstract:
Embodiments of the present invention provide an approach for dynamic random access memory (DRAM)/SSD-based memory to improve memory usage. Specifically, embodiments of the present invention provide a field programmable gate array (FPGA) (SSD controller) that comprises a PCI-express interface for receiving and converting serial data to 64 bit data; a data/bit converter coupled to the interface for converting the 64 bit data to 128 bit data; and a memory controller coupled to the data converter for receiving and storing the 128 bit data in a set of DRAM units coupled to the memory controller. In general, the data converter comprises an input address buffer for receiving and buffering address information; an address matching component coupled to the input address buffer for analyzing the address information and determining a matching address based on the address information; an output address buffer coupled to the address matching component for buffering and outputting the matching address; an input data buffer for receiving and buffering 64 bit data; a data matching component coupled to the input data buffer for matching the 64 bit data with a corresponding address; and an output data buffer coupled to the data matching component for buffering and outputting the 128 bit data based on output of the data matching component.
Public/Granted literature
- US20120254527A1 DYNAMIC RANDOM ACCESS MEMORY FOR A SEMICONDUCTOR STORAGE DEVICE-BASED SYSTEM Public/Granted day:2012-10-04
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